AUIRF1324S-7P
G D S
Gate Drain Source
Base Part Number Package Type
Standard Pack
Orderable Part Number
Form Quantity
AUIRF1324S-7P
D
2
Pak 7 Pin
Tube 50
AUIRF1324S-7P
V
DSS
24V
R
DS(on)
typ.
0.8m
max.
1.0m
I
D (Silicon Limited)
429A
I
D (Package Limited)
240A
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating. These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and wide variety
of other applications.
1 2015-9-30
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 429
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 303
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Package Limited) 240
I
DM
Pulsed Drain Current 1640
P
D
@T
C
= 25°C Maximum Power Dissipation 300 W
Linear Derating Factor 2.0 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 230
mJ
I
AR
Avalanche Current See Fig.14,15, 18a, 18b A
E
AR
Repetitive Avalanche Energy
mJ
dv/dt Peak Diode Recovery 1.6 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case ––– 0.50
°C/W
R
JA
Junction-to-Ambient ––– 40
S (Pin 2, 3, 5, 6, 7)
G (Pin 1)
D
2
Pak 7 Pin
