AUIRF1324S
AUIRF1324L
V
DSS
24V
R
DS(on)
typ.
1.3m
max.
1.65m
I
D (Silicon Limited)
340A
I
D (Package Limited)
195A
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition be yon d those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
Features
Advanced Process Techn ology
Ultra Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temp erature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications.
1 2015-11-11
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 340
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 240
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Package Limited) 195
I
DM
Pulsed Drain Current 1420
P
D
@T
C
= 25°C Maximum Power Dissipation 300 W
Linear Derating Factor 2.0 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 270
mJ
I
AR
Avalanche Current See Fig.14,15, 18a, 18b A
E
AR
Repetitive Avalanche Energy
mJ
dv/dt Peak Diode Recovery 0.46 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case ––– 0.50
°C/W
R
JA
Junction-to-Ambient (PCB Mount), D
2
Pak ––– 40
D
2
Pak
AUIRF1324S
TO-262
AUIRF1324L
S
D
G
S
D
G
D
Base part number Package Type
Standard Pack
Form Quantity
AUIRF1324L TO-262 Tube 50 AUIRF1324L
AUIRF1324S D
2
-Pak
Tube 50 AUIRF1324S
Tape and Reel Left 800 AUIRF1324STRL
Orderable Part Number
G D S
Gate Drain Source
HEXFET
®
Power MOSFET
