AUIRF1010Z
AUIRF1010ZS
AUIRF1010ZL
V
DSS
55V
R
DS(on)
max.
7.5m
I
D (Silicon Limited)
94A
I
D (Package Limited)
75A
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide
variety of other applications.
1 2017-09-18
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 94
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 66
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Package Limited) 75
I
DM
Pulsed Drain Current 360
P
D
@T
C
= 25°C Maximum Power Dissipation 140 W
Linear Derating Factor 0.90 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 130
mJ
E
AS
(tested)
Single Pulse Avalanche Energy Tested Value 180
I
AR
Avalanche Current See Fig.15,16, 12a, 12b A
E
AR
Repetitive Avalanche Energy
mJ
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case ––– 1.11
°C/W
R
CS
Case-to-Sink, Flat, Greased Surface 0.50 –––
R
JA
Junction-to-Ambient ––– 62
R
JA
Junction-to-Ambient ( PCB Mount, steady state) 40
TO-220AB
AUIRF1010Z
D
2
Pak
AUIRF1010ZS
TO-262
AUIRF1010ZL
S
D
G
S
D
G
S
D
G
D
Base part number Package Type
Standard Pack
Form Quantity
AUIRF1010Z TO-220 Tube 50 AUIRF1010Z
AUIRF1010ZL TO-262 Tube 50 AUIRF1010ZL
AUIRF1010ZS D
2
-Pak
Tube 50 AUIRF1010ZS
Tape and Reel Left 800 AUIRF1010ZSTRL
Orderable Part Number
G D S
Gate Drain Source
HEXFET
®
Power MOSFET