AUIRF1010EZ
AUIRF1010EZS
AUIRF1010EZL
V
DSS
60V
R
DS(on)
typ.
6.8m
max.
8.5m
I
D (Silicon Limited)
84A
I
D (Package Limited)
75A
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and wide variety of other applications.
1 2015-9-30
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 84
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 60
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Package Limited) 75
I
DM
Pulsed Drain Current 340
P
D
@T
C
= 25°C Maximum Power Dissipation 140 W
Linear Derating Factor 0.90 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 99
mJ
E
AS
(tested)
Single Pulse Avalanche Energy Tested Value 180
I
AR
Avalanche Current See Fig.15,16, 12a, 12b A
E
AR
Repetitive Avalanche Energy
mJ
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case ––– 1.11
°C/W
R
CS
Case-to-Sink, Flat, Greased Surface 0.50 –––
R
JA
Junction-to-Ambient ––– 62
R
JA
Junction-to-Ambient ( PCB Mount, steady state) 40
TO-220AB
AUIRF1010EZ
D
2
Pak
AUIRF1010EZS
TO-262
AUIRF1010EZL
S
D
G
S
D
G
S
D
G
D
Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
AUIRF1010EZ TO-220 Tube 50 AUIRF1010EZ
AUIRF1010EZL TO-262 Tube 50 AUIRF1010EZL
AUIRF1010EZS
Tube 50 AUIRF1010EZS
Tape and Reel Left 800 AUIRF1010EZSTRL
D
2
-Pak
G D S
Gate Drain Source
