Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.1
www.infineon.com 2017-06-27
AIGW50N65F5
Highspeedswitchingseriesfifthgeneration
HighspeedfastIGBTinTRENCHSTOP
TM
5technology
FeaturesandBenefits:
HighspeedF5technologyoffering:
•Best-in-Classefficiencyinhardswitchingandresonant
topologies
•650Vbreakdownvoltage
•LowgatechargeQ
G
•Maximumjunctiontemperature175°C
•Dynamicallystresstested
•QualifiedaccordingtoAEC-Q101
•Greenpackage(RoHScompliant)
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
Applications:
•Off-boardcharger
•On-boardcharger
•DC/DCconverter
•Power-factorcorrection
Packagepindefinition:
•Pin1-gate
•Pin2&backside-collector
•Pin3-emitter
KeyPerformanceandPackageParameters
Type V
CE
I
C
V
CEsat
,T
vj
=25°C T
vjmax
Marking Package
AIGW50N65F5 650V 50A 1.66V 175°C AG50EF5 PG-TO247-3