SOT89 NPN SILICON POWER
(SWITCHING) TRANSISTOR
ISSUE 6 - JANUARY 2003
FEATURES
* 2W POWER DISSIPATION
* 6A PEAK PULSE CURRENT
* EXCELLENT h
FE
CHARACTERISTICS UP TO 6 Amps
* EXTREMELY LOW SATURATION VOLTAGE e.g. 13mV typ.
* EXTREMELY LOW EQUI VALENT ON-RE SISTANCE;
*R
CE(sat)
87mΩ
Ω Ω
Ω at 2.75A
COMPLIMENTARY TYPE - FCX720
PARTMARKING DETAIL - 619
ABSOLUTE MAXIMUM RATINGS.
PARAM ETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
50 V
Collector-Em itter Voltage V
CEO
50 V
Emitter-B ase Voltage V
EBO
5V
Peak Pulse Current I
CM
6A
Continuo us Collector Current † I
C
3.0 A
Base Current I
B
500 mA
Powe r Dissipation at T
amb
=25°C P
tot
1.5†
2‡
W
Operating a nd Storage Tem perature Range T
j
:T
stg
-55 to +150 °C
† recommended P
tot
calculated using FR4 measuring 25x25x0.6mm
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed cond itions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for these devices
Refer to the handling instructions for soldering surface mount components.
FCX619
C
B
C
E
