ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
= 4400
V
DSM
= 5200 V
I
T
AV
M
= 4120 A
I
T
RMS
= 6470 A
I
TSM
= 85.2×10
3
A
V
T0
=1.04 V
r
T
= 0.115
mΩ
ΩΩ
Ω
Phase Control Thyristor
5STP 52U5200
Doc. No. 5SYA1042-02 Dec. 03
•
••
• Patented free-floating silicon technology
•
••
• Low on-state and switching losses
•
••
• Designed for traction, energy and industrial applications
•
••
• Optimum power handling capability
•
••
• Interdigitated amplifying gate
Blocking
Maximum rated values
1)
Symbol Conditions 5STP 52U5200 5STP 52U5000 5STP 52U4600
V
DSM,
V
RSM
f = 5 Hz, t
p
= 10 ms 5200 V 5000 V 4600 V
V
DRM,
V
RRM
f = 50 Hz, t
p
= 10 ms 4400 V 4200 V 4000 V
V
RSM
t
p
= 5 ms, single pulse 5700 V 5500 V 5100 V
dV/dt
crit
Exp. to 0.67 x V
DRM
, T
vj
= 110°C 2000 V/µs
Characteristic values
Parameter Symbol Conditions min typ max Unit
Forward leakage current I
DSM
V
DSM
,
T
vj
= 110°C 600 mA
Reverse leakage current I
RSM
V
RSM
,
T
vj
= 110°C 600 mA
Mechanical data
Maximum rated values
1)
Parameter Symbol Conditions min typ max Unit
Mounting force F
M
120 135 160 kN
Acceleration a Device unclamped 50 m/s
2
Acceleration a Device clamped 100 m/s
2
Characteristic values
Parameter Symbol Conditions min typ max Unit
Weight m 3.6 kg
Housing thickness H F
M
= 135 kN, T
a
= 25 °C 34.4 35.4 mm
Surface creepage distance D
S
56 mm
Air strike distance D
a
22 mm
1) Maximum rated values indicate limits beyond which damage to the device may occur