ABB Semiconductors AG reserves the right to change specifications without notice.
V
DSM
= 4200 V
I
TAVM
= 4275 A
I
TRMS
= 6715 A
I
TSM
= 60000 A
V
T0
= 0.95 V
r
T
= 0.130
mΩ
Doc. No. 5SYA1051-01 Sep.00
• Patented free-floating silicon technology
• Low on-state and switching losses
• Designed for traction, energy and industrial applications
• Optimum power handling capability
• Interdigitated amplifying gate.
Blocking
Part Number 5STP 38Q4200 5STP 38Q4000 5STP 38Q3600
Conditions
V
DRM
V
RRM
4200 V 4000 V 3600 V f = 50 Hz, t
p
= 10ms
V
RSM1
4600 V 4400 V 4000 V t
p
= 5 ms, single pulse
I
DRM
≤ 400 mA
V
DRM
I
RRM
≤ 400 mA
V
RRM
T
j
= 125°C
dV/dt
crit
2000 V/µs @ Exp. to 0.67xV
DRM
Mechanical data
F
M
Mounting force nom. 90 kN
min. 81 kN
max. 108 kN
a
Acceleration
Device unclamped
Device clamped
50
100
m/s
2
m/s
2
m Weight 2.1 kg
D
S
Surface creepage distance 36 mm
D
a
Air strike distance 15 mm
Phase Control Thyristor
5STP 38Q4200