ABB Semiconductors AG reserves the right to change specifications without notice.
DSM
= 5200
I
TAVM
= 3875
I
TRMS
= 6090
I
TSM
= 55000
T0
=1.03
T
= 0.160
mΩ
ΩΩ
Ω
Phase Control Thyristor
5STP 34Q5200
D
. N
.
YA1
2-
1
.
1
• Patented free-floating silicon technology
• Low on-state and switching losses
• Designed for traction, energy and industrial applications
• Optimum power handling capability
• Interdigitated amplifying gate
Blockin
Part Number 5STP 5STP 34Q5000 5STP 34Q4600
Conditions
V
DSM
V
RSM
5200 V 5000 V 4600 V f = 5 Hz, t
p
= 10ms
V
DRM
V
RRM
4400 V 4200 V 4000 V f = 50 Hz, t
p
= 10ms
V
RSM1
5700 V 5500 V 5100 V t
p
= 5ms, single pulse
I
DSM
≤ 500 mA
V
DSM
I
RSM
≤ 500 mA
V
RSM
T
j
= 125°C
dV/dt
crit
2000 V/µs Exp. to 0.67 x V
DRM
, T
j
= 125°C
V
DRM
/ V
RRM
are equal to V
DSM
/ V
RSM
values up to T
j
= 110°C
Mechanical data
F
M
Mounting force nom. 90 kN
min. 81 kN
max. 108 kN
a
Acceleration
Device unclamped
Device clamped
50
100
m/s
2
m/s
2
mWeight 2.1kg
D
S
Surface creepage distance 36 mm
D
a
Air strike distance 15 mm
