ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
I
=
3370 A
I
=
5292 A
I
=
49×10
3
A
V
=
0.94 V
r
=
0.066
Phase Control Thyristor
5STP 34H1601
Doc. No. 5SYA1065-01 March 05
• Low on-state and switching losses
• Designed for traction, energy and industrial applications
• Optimum power handling capability
Blocking
Maximum rated values
1)
Symbol Conditions 5STP 34H1601
5STP 34H1401
5STP 34H1201
V
DRM,
V
RRM
f = 50 Hz, t
p
= 10 ms 1600 V 1400 V 1200 V
dV/dt
crit
Exp. to 1070 V, T
vj
= 125°C 1000 V/µs
Characteristic values
Parameter Symbol Conditions min typ max Unit
Forward leakage current I
DRM
V
DRM
, T
vj
= 125°C 200 mA
Reverse leakage current I
RRM
V
RRM
, T
vj
= 125°C 200 mA
Mechanical data
Maximum rated values
1)
Parameter Symbol Conditions min typ max Unit
Mounting force F
M
45 50 55 kN
Acceleration a
Device unclamped 50 m/s
2
Acceleration a
Device clamped 100 m/s
2
Characteristic values
Parameter Symbol Conditions min typ max Unit
Weight m
0.93 kg
Surface creepage distance D
S
36 mm
Air strike distance D
a
15 mm
1) Maximum rated values indicate limits beyond which damage to the device may occur
