1)
Maximum Ratings are those values beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
DSM
= 1800
I
TAVM
= 3000
I
TRMS
= 4710
I
TSM
= 47000
T0
=0.88
T
= 0.103
mΩ
ΩΩ
Ω
Phase Control Thyristor
5STP 27H1800
Doc. No. 5SYA1048-02 Jan. 02
•
••
• Patented free-floating silicon technology
•
••
• Low on-state and switching losses
•
••
• Designed for traction, energy and industrial applications
•
••
• Optimum power handling capability
Blocking
Maximum rated values
1)
Symbol Conditions 5STP 27H1800 5STP 27H1600 5STP 27H1200
V
DRM,
V
RRM
f = 50 Hz, t
p
= 10ms 1800 V 1600 V 1200 V
V
RSM1
t
p
= 5ms, single pulse 2000 V 1800 V 1400 V
dV/dt
crit
Exp. to 0.67 x V
DRM
, T
j
= 125°C 1000 V/µs
Characteristic values
Parameter Symbol Conditions min typ max Unit
Forwarde leakage current I
DRM
V
DRM
, Tj = 125°C 200 mA
Reverse leakage current I
RRM
V
RRM
, Tj = 125°C 200 mA
Mechanical data
Maximum rated values
1)
Parameter Symbol Conditions min typ max Unit
Mounting force F
M
45 50 60 kN
Acceleration a Device unclamped 50 m/s
2
Acceleration a Device clamped 100 m/s
2
Characteristic values
Parameter Symbol Conditions min typ max Unit
Weight m 0.9 kg
Surface creepage distance D
S
36 mm
Air strike distance D
a
15 mm