ABB Semiconductors AG reserves the right to change specifications without notice.
DSM
= 2800
I
TAVM
= 2625
I
TRMS
= 4120
I
TSM
= 43000
T0
=0.85
T
= 0.160
mΩ
ΩΩ
Ω
Phase Control Thyristor
5STP 24H2800
D
. N
.
YA1
47-
2
.
1
• Patented free-floating silicon technology
• Low on-state and switching losses
• Designed for traction, energy and industrial applications
• Optimum power handling capability
• Interdigitated amplifying gate
Blockin
Part Number 5STP 24H2800 5STP 24H2600 5STP 24H2200
Conditions
V
DRM
V
RRM
2800 V 2600 V 2200 V f = 50 Hz, t
p
= 10ms
V
RSM1
3000 V 2800 V 2400 V t
p
= 5ms, single pulse
I
DRM
≤ 300 mA
V
DRM
I
RRM
≤ 300 mA
V
RRM
T
j
= 125°C
dV/dt
crit
1000 V/µs Exp. to 0.67 x V
DRM
, T
j
= 125°C
Mechanical data
F
M
Mounting force nom. 50 kN
min. 45 kN
max. 60 kN
a
Acceleration
Device unclamped
Device clamped
50
100
m/s
2
m/s
2
mWeight 0.9kg
D
S
Surface creepage distance 36 mm
D
a
Air strike distance 15 mm
