1)
Maximum Ratings are those values beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
DSM
= 6500
I
TAVM
= 1800
I
TRMS
= 2820
I
TSM
= 32000
T0
=1.2
T
=0.43
mΩ
ΩΩ
Ω
Phase Control Thyristor
5STP 18M6500
Doc. No. 5SYA1010-03 Jan. 02
•
••
• Patented free-floating silicon technology
•
••
• Low on-state and switching losses
•
••
• Designed for traction, energy and industrial applications
•
••
• Optimum power handling capability
•
••
• Interdigitated amplifying gate
Blocking
Maximum rated values
1)
Symbol Conditions 5STP 18M6500 5STP 18M6200 5STP 18M5800
V
DSM,
V
RSM
f = 5 Hz, t
p
= 10ms 6500 V 6200 V 5800 V
V
DRM,
V
RRM
f = 50 Hz, t
p
= 10ms 5600 V 5300 V 4900 V
V
RSM1
t
p
= 5ms, single pulse 7000 V 6700 V 6300 V
dV/dt
crit
Exp. to 0.67 x V
DRM
, T
j
= 125°C 2000 V/µs
Characteristic values
Parameter Symbol Conditions min typ max Unit
Forwarde leakage current I
DSM
V
DSM
,
T
j
= 125°C 600 mA
Reverse leakage current I
RSM
V
RSM
,
T
j
= 125°C 600 mA
V
DRM
/ V
RRM
are equal to V
DSM
/ V
RSM
values up to T
j
= 110°C
Mechanical data
Maximum rated values
1)
Parameter Symbol Conditions min typ max Unit
Mounting force F
M
63 70 84 kN
Acceleration a Device unclamped 50 m/s
2
Acceleration a Device clamped 100 m/s
2
Characteristic values
Parameter Symbol Conditions min typ max Unit
Weight m 1.85 kg
Surface creepage distance D
S
45 mm
Air strike distance D
a
21 mm