1)
Maximum Ratings are those values beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
DSM
= 4200
I
TAVM
= 2075
I
TRMS
= 3260
I
TSM
= 32000
T0
=0.96
T
= 0.285
mΩ
ΩΩ
Ω
Phase Control Thyristor
5STP 18H4200
Doc. No. 5SYA1046-02 Jan. 02
•
••
• Patented free-floating silicon technology
•
••
• Low on-state and switching losses
•
••
• Designed for traction, energy and industrial applications
•
••
• Optimum power handling capability
•
••
• Interdigitated amplifying gate
Blocking
Maximum rated values
1)
Symbol Conditions 5STP 18H4200 5STP 18H4000 5STP 18H3600
V
DRM,
V
RRM
f = 50 Hz, t
p
= 10ms 4200 V 4000 V 3600 V
V
RSM1
t
p
= 5ms, single pulse 4600 V 4400 V 4000 V
dV/dt
crit
Exp. to 0.67 x V
DRM
, T
j
= 125°C 1000 V/µs
Characteristic values
Parameter Symbol Conditions min typ max Unit
Forwarde leakage current I
DRM
V
DRM
, Tj = 125°C 300 mA
Reverse leakage current I
RRM
V
RRM
, Tj = 125°C 300 mA
Mechanical data
Maximum rated values
1)
Parameter Symbol Conditions min typ max Unit
Mounting force F
M
45 50 60 kN
Acceleration a Device unclamped 50 m/s
2
Acceleration a Device clamped 100 m/s
2
Characteristic values
Parameter Symbol Conditions min typ max Unit
Weight m 0.9 kg
Surface creepage distance D
S
36 mm
Air strike distance D
a
15 mm