1)
Maximum ratings are those values beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
DSM
= 4200
I
TAVM
= 1150
I
TRMS
= 1800
I
TSM
= 15000
T0
=0.95
T
= 0.575
mΩ
ΩΩ
Ω
Phase Control Thyristor
5STP 12F4200
Doc. No. 5SYA1021-03 Jan. 02
•
••
• Patented free-floating silicon technology
•
••
• Low on-state and switching losses
•
••
• Designed for traction, energy and industrial applications
•
••
• Optimum power handling capability
Blocking
Maximum rated values
1)
Symbol Conditions 5STP 12F4200 5STP 12F4000 5STP 12F3600
V
DRM,
V
RRM
f = 50 Hz, t
p
= 10 ms 4200 V 4000 V 3600 V
V
RSM
t
p
= 5 ms, single pulse 4600 V 4400 V 4000 V
dV/dt
crit
Exp. to 0.67 x V
DRM
, T
vj
= 125°C 1000 V/µs
Characteristic values
Parameter Symbol Conditions min typ max Unit
Forward leakage current I
DRM
V
DRM
, T
vj
= 125°C 200 mA
Reverse leakage current I
RRM
V
RRM
, T
vj
= 125°C 200 mA
Mechanical data
Maximum rated values
1)
Parameter Symbol Conditions min typ max Unit
Mounting force F
M
14 22 24 kN
Acceleration a Device unclamped 50 m/s
2
Acceleration a Device clamped 100 m/s
2
Characteristic values
Parameter Symbol Conditions min typ max Unit
Weight m 0.6 kg
Surface creepage distance D
S
25 mm
Air strike distance D
a
14 mm