1)
Maximum Ratings are those values beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
DSM
= 5200
I
TAVM
= 440
I
TRMS
= 690
I
TSM
= 5000
T0
=1.2
T
=1.6
mΩ
ΩΩ
Ω
Phase Control Thyristor
5STP 04D5200
Doc. No. 5SYA1026-04 Jan. 02
•
••
• Patented free-floating silicon technology
•
••
• Low on-state and switching losses
•
••
• Designed for traction, energy and industrial applications
•
••
• Optimum power handling capability
•
••
• Interdigitated amplifying gate
Blocking
Maximum rated values
1)
Symbol Conditions 5STP 04D5200 5STP 04D5000 5STP 04D4600
V
DSM,
V
RSM
f = 5 Hz, t
p
= 10ms, Tj = 125°C 5200 V 5000 V 4600 V
V
DRM,
V
RRM
f = 50 Hz, t
p
= 10ms, Tj = 125°C 4400 V 4200 V 4000 V
V
RSM1
t
p
= 5ms, single pulse, Tj = 125°C 5700 V 5500 V 5100 V
dV/dt
crit
Exp. to 0.67 x V
DRM
, T
j
= 125°C 1000 V/µs
Characteristic values
Parameter Symbol Conditions min typ max Unit
Forwarde leakage current I
DSM
V
DSM
,
T
j
= 125°C 100 mA
Reverse leakage current I
RSM
V
RSM
,
T
j
= 125°C 100 mA
V
DRM
/ V
RRM
are equal to V
DSM
/ V
RSM
values up to T
j
= 110°C
Mechanical data
Maximum rated values
1)
Parameter Symbol Conditions min typ max Unit
Mounting force F
M
81012kN
Acceleration a Device unclamped 50 m/s
2
Acceleration a Device clamped 100 m/s
2
Characteristic values
Parameter Symbol Conditions min typ max Unit
Weight m 0.3 kg
Surface creepage distance D
S
25 mm
Air strike distance D
a
14 mm