ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
V
=
6500 V
I
=
350 A
I
=
550 A
I
=
4.5×10
3
A
V
=
1.2 V
r
=
2.3
Phase Control Thyristor
5STP 03X6500
Doc. No. 5SYA1003-04 Oct. 04
• Patented free-floating silicon technology
• Low on-state and switching losses
• Designed for traction, energy and industrial applications
• Optimum power handling capability
• Interdigitated amplifying gate
Blocking
Maximum rated values
1)
Symbol Conditions 5STP 03X6500
5STP 03X6200
5STP 03X5800
V
DSM,
V
RSM
f = 5 Hz, t
p
= 10 ms 6500 V 6200 V 5800 V
V
DRM,
V
RRM
f = 50 Hz, t
p
= 10 ms 5600 V 5300 V 4900 V
V
RSM
t
p
= 5 ms, single pulse 7000 V 6700 V 6300 V
dV/dt
crit
Exp. to 3750 V, T
vj
= 125°C 1000 V/µs
Characteristic values
Parameter Symbol Conditions min typ max Unit
Forward leakage current I
DSM
V
DSM
,
T
vj
= 125°C 150 mA
Reverse leakage current I
RSM
V
RSM
,
T
vj
= 125°C 150 mA
V
DRM
/ V
RRM
are equal to V
DSM
/ V
RSM
values up to T
vj
= 110°C
Mechanical data
Maximum rated values
1)
Parameter Symbol Conditions min typ max Unit
Mounting force F
M
8 10 12 kN
Acceleration a
Device unclamped 50 m/s
2
Acceleration a
Device clamped 100 m/s
2
Characteristic values
Parameter Symbol Conditions min typ max Unit
Weight m
0.4 kg
Housing thickness H
F
M
= 10 kN, T
a
= 25 °C 34.8 35.4 mm
Surface creepage distance D
S
38 mm
Air strike distance D
a
21 mm
1) Maximum rated values indicate limits beyond which damage to the device may occur