ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
V
SM
= 5200 V
I
T(AV)M
= 1980 A
I
T(RMS)
= 3100 A
I
TSM
= 42×10 A
V
T0
=1.06V
r
T
= 0.219
mΩ
ΩΩ
Ω
Bi-Directional Control Thyristor
5STB 25U5200
Doc. No. 5SYA1038-02 Jul. 03
•
••
• Tw o thyristors integrated into one wafer
•
••
• Patented free-floating silicon technology
•
••
• Designed for energy and industrial applications
•
••
• Optimum pow er handling capability
•
••
• Interdigitated amplifying gate.
The electrical and thermal data are valid for one thyristor half of the device.
Blocking
Maximum rated values
1)
Symbol Conditions 5STB 25U5200 5STB 25U5000 5STB 25U4600
V
SM
f = 5 Hz, t
p
= 10 ms 5200 V 5000 V 4600 V
V
RM
f = 50 Hz, t
p
= 10 ms 4400 V 4200 V 4000 V
dV/dt
crit
Exp. to 0.67 x V
RM
, T
vj
= 110°C 2000 V/µs
Characteristic values
Parameter Symbol Conditions min typ max Unit
Max. leakage current I
RM
V
RM
, T
vj
= 110°C 400 mA
V
RM
is equal to the V
SM
value up to T
j
= 95 °C
Mechanical data
Maximum rated values
1)
Parameter Symbol Conditions min typ max Unit
Mounting force F
M
120 135 160 kN
Acceleration a Device unclamped 50 m/s
2
Acceleration a Device clamped 100 m/s
2
Characteristic values
Parameter Symbol Conditions min typ max Unit
Weight m 3.6 kg
Surface creepage distance D
S
53 mm
Air strike distance D
a
22 mm
1) Maximum rated values indicate limits beyond which damage to the device may occur
