ABB Semiconductors AG reserves the right to change specifications without notice.
V
SM
= 4200 V
I
TAVM
= 1920 A
I
TRMS
= 3020 A
I
TSM
= 32000 A
V
T0
=0.96V
r
T
= 0.285
mΩ
ΩΩ
Ω
Bi-Directional Control Thyristor
5STB 18N4200
Doc. No. 5SYA1040-03 Sep. 01
• Two thyristors integrated into one wafer
• Patented free-floating silicon technology
• Designed for traction, energy and industrial applications
• Optimum power handling capability
• Interdigitated amplifying gate.
The electrical and thermal data are valid for one thyristor half of the device.
Blocking
Part Number 5STB 18N4200 5STB 18N4000 5STB 18N3600
Conditions
V
SM
4200 V 4000 V 3600 V f = 5 Hz, t
p
= 10ms
V
RM
4200 V 4000 V 3600 V f = 50 Hz,t
p
= 10ms
I
SM
≤ 400 mA
V
SM
I
RM
≤ 400 mA
V
RM
T
j
= 125°C
dV/dt
crit
1000 V/µs @ Exp. to 0.67xV
SM
V
RM
is equal to V
SM
up to T
j
= 110°C
Mechanical data
F
M
Mounting force nom. 90 kN
min. 81 kN
max. 108 kN
a
Acceleration
Device unclamped
Device clamped
50
100
m/s
2
m/s
2
mWeight 2.9kg
D
S
Surface creepage distance 53 mm
D
a
Air strike distance 22 mm
