ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
V
CE
= 1700
V
I
C
= 800
A
Doc. No. 5SYA1590-00 Oct 06
• Low-loss, rugged SPT chip-set
• Smooth switching SPT chip-set for
good EMC
• Industry standard package
• High power density
• AlSiC base-plate for high power
cycling capability
• AlN substrate for low thermal
resistance
Maximum rated values
1)
Parameter Symbol Conditions min max
Unit
Collector-emitter voltage V
CES
V
GE
= 0 V, T
vj
≥ 25 °C 1700
V
DC collector current I
C
T
c
= 80 °C 800 A
Peak collector current I
CM
t
p
= 1 ms, T
c
= 80 °C 1600
A
Gate-emitter voltage V
GES
-20 20 V
Total power dissipation P
tot
T
c
= 25 °C, per switch (IGBT) 4800
W
DC forward current I
F
800 A
Peak forward current I
FRM
1600
A
Surge current I
FSM
V
R
= 0 V, T
vj
= 125 °C,
t
p
= 10 ms, half-sinewave
6600
A
IGBT short circuit SOA t
psc
V
CC
= 1200 V, V
CEM CHIP
≤ 1700 V
V
GE
≤ 15 V, T
vj
≤ 125 °C
10 µs
Isolation voltage V
isol
1 min, f = 50 Hz 4000
V
Junction temperature T
vj
150 °C
Junction operating temperature T
vj(op)
-40 125 °C
Case temperature T
c
-40 125 °C
Storage temperature T
stg
-40 125 °C
M
s
Base-heatsink, M6 screws 4 6
M
t1
Main terminals, M8 screws 8 10
Mounting torques
2)
M
t2
Auxiliary terminals, M4 screws 2 3
Nm
1)
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747
2)
For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01
ABB HiPak
IGBT Module
5SNE 0800M170100