ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
V
CE
= 3300
V
I
C
= 1200
A
• Low-loss, rugged SPT chip-set
• Smooth switching SPT chip-set for
good EMC
• Industry standard package
• High power density
• AlSiC base-plate for high power
cycling capability
• AlN substrate for low thermal
resistance
Maximum rated values
1)
Parameter Symbol Conditions min max
Unit
Collector-emitter voltage V
CES
V
GE
= 0 V 3300
V
DC collector current I
C
T
c
= 80 °C 1200
A
Peak collector current I
CM
t
p
= 1 ms, T
c
= 80 °C 2400
A
Gate-emitter voltage V
GES
-20 20 V
Total power dissipation P
tot
T
c
= 25 °C, per switch (IGBT) 11750
W
DC forward current I
F
1200
A
Peak forward current I
FRM
2400
A
Surge current I
FSM
V
R
= 0 V, T
vj
= 125 °C,
t
p
= 10 ms, half-sinewave
12000
A
IGBT short circuit SOA t
psc
V
CC
= 2500 V, V
CEM CHIP
≤ 3300 V
V
GE
≤ 15 V, T
vj
≤ 125 °C
10 µs
Isolation voltage V
isol
1 min, f = 50 Hz 6000
V
Junction temperature T
vj
150 °C
Junction operating temperature T
vj(op)
-40 125 °C
Case temperature T
c
-40 125 °C
Storage temperature T
stg
-40 125 °C
M
s
Base-heatsink, M6 screws 4 6
M
t1
Main terminals, M8 screws 8 10
Mounting torques
2)
M
t2
Auxiliary terminals, M4 screws 2 3
Nm
1)
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747
2)
For detailed mounting instructions refer to ABB Document No. 5SYA2039
ABB HiPak
IGBT Module
5SNA 1200E330100
