ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
V
CE
= 1200
V
I
C
= 75
A
Die size: 10.2
x
10.2 mm
Doc. No. 5SYA1636-01 Sep 06
• Ultra low loss thin IGBT die
• Highly rugged SPT
+
design
• Large bondable emitter area
Maximum rated values
1)
Parameter Symbol Conditions min max
Unit
Collector-emitter voltage V
CES
V
GE
= 0 V, T
vj
≥ 25 °C
1200
V
DC collector current I
C
75 A
Peak collector current I
CM
Limited by T
vjmax
150 A
Gate-emitter voltage V
GES
-20 20 V
IGBT short circuit SOA t
psc
V
CC
= 900 V, V
CEM
≤ 1200 V
V
GE
≤ 15 V, T
vj
≤ 125 °C
10 µs
Junction temperature T
vj
-40 150 °C
1)
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9
IGBT-Die
5SMY 12J1200
