ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
V
CE
= 6500
V
I
C
= 25
A
Die size: 13.6
x
13.6 mm
Doc. No. 5SYA1627-01 Sep 05
• Low loss, rugged SPT technology
• Smooth switching for good EMC
• Large bondable emitter area
• Passivation: SIPOS and Silicon Nitride plus Polyimide
Maximum rated values
1)
Parameter Symbol Conditions min max
Unit
Collector-emitter voltage V
CES
V
GE
= 0 V, T
vj
≥ 25 °C
6500
V
DC collector current I
C
25 A
Peak collector current I
CM
Limited by T
vjmax
50 A
Gate-emitter voltage V
GES
-20 20 V
IGBT short circuit SOA t
psc
V
CC
= 4400 V, V
CEM
≤ 6500 V
V
GE
≤ 15 V, T
vj
≤ 125 °C
10 µs
Junction temperature T
vj
-40 125 °C
1)
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9
IGBT-Die
5SMX 12M6500
PRELIMINARY
