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Doc. No. 5SYA1620-01 July 03
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Collector-emitter voltage V
CES
V
GE
= 0 V, T
vj
≥ 25 °C
1700 V
DC collector current I
C
100 A
Peak collector current I
CM
Limited by T
vjmax
200 A
Gate-emitter voltage V
GES
-20 20 V
IGBT short circuit SOA t
psc
V
CC
= 1300 V , V
CEM
≤ 1700 V
V
GE
≤ 15 V, T
vj
≤ 125 ° C
10 µs
Junction temperature T
vj
-40 150 °C
1) Maximum rated values indicate limits beyond which damage to the device may occur
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