ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
V
RRM
= 6500
V
I
F
= 50
A
Die size: 13.6
x
13.6 mm
Doc. No. 5SYA1666-01 July 07
• Fast and soft reverse recovery
• Low losses
• Large SOA
• Passivation: SIPOS and Silicon Nitride plus Polyimide
Maximum rated values
1)
Parameter Symbol Conditions min max Unit
Repetitive peak reverse voltage V
RRM
T
vj
≥ 25 °C
6500
V
Continuous forward current I
F
50 A
Repetitive peak forward current I
FRM
Limited by T
vjmax
100 A
Junction temperature T
vj
-40 125 °C
1)
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2
Diode characteristic values
2)
Parameter Symbol Conditions min typ max Unit
T
vj
= 25 °C
3.2 V
Continuous forward voltage V
F
I
F
= 50 A
T
vj
= 125 °C
3.4 V
T
vj
= 25 °C
20 µA
Continuous reverse current I
R
V
R
= 6500 V
T
vj
= 125 °C
3 6 mA
T
vj
= 25 °C
70 A
Peak reverse recovery current I
rr
T
vj
= 125 °C
80 A
T
vj
= 25 °C
65 µC
Recovered charge Q
rr
T
vj
= 125 °C
100 µC
T
vj
= 25 °C
1700
ns
Reverse recovery time t
rr
T
vj
= 125 °C
2250
ns
T
vj
= 25 °C
100 mJ
Reverse recovery energy E
rec
I
F
= 50 A,
V
R
= 3600 V,
di/dt = 230 A/µs,
L
σ
= 3400 nH,
Inductive load,
Switch:
2x 5SMX12M6500
T
vj
= 125 °C
180 mJ
2)
Characteristic values according to IEC 60747 - 2
Fast-Diode Die
5SLX 12M6500
