ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
V
RRM
= 3300
V
I
F
= 100
A
Die size: 13.6
x
13.6 mm
• Fast and soft reverse-recovery
• Low losses
• High SOA
• Passivation: SIPOS Nitride plus Polyimide
Maximum rated values
1)
Parameter Symbol Conditions min max Unit
Repetitive peak reverse voltage V
RRM
3300
V
Continuous forward current I
F
100 A
Repetitive peak forward current I
FRM
Limited by T
vjmax
200 A
Junction temperature T
vj
-40 125 °C
1)
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2
Diode characteristic values
2)
Parameter Symbol Conditions min typ max Unit
T
vj
= 25 °C
2.0 2.3 2.7 V
Continuous forward voltage V
F
I
F
= 100 A
T
vj
= 125 °C
2.35 V
T
vj
= 25 °C
5 µA
Continuous reverse current I
R
V
R
= 3300 V
T
vj
= 125 °C
2.5 7 mA
T
vj
= 25 °C
115 A
Peak reverse recovery current I
rr
T
vj
= 125 °C
140 A
T
vj
= 25 °C
65 µC
Recovered charge Q
rr
T
vj
= 125 °C
110 µC
T
vj
= 25 °C
470 ns
Reverse recovery time t
rr
T
vj
= 125 °C
800 ns
T
vj
= 25 °C
85 mJ
Reverse recovery energy E
rec
I
F
= 100 A,
V
R
= 1800 V,
di/dt = 550 A/µs,
L
σ
= 1200 nH,
Inductive load,
Switch:
2x 5SMX12M3300
T
vj
= 125 °C
145 mJ
2)
Characteristic values according to IEC 60747 - 2
Fast-Diode Die
5SLX 12M3301
