ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
V
DRM
=
6500
V
I
TGQM
=
4200
A
I
TSM
=
26×10
3
A
V
(T0)
=
2.0
V
r
T
=
0.54
mΩ
V
DC-link
=
4000
V
Asymmetric Integrated Gate-
Commutated Thyristor
5SHY 42L6500
PRELIMINARY
Doc. No. 5SYA1245-00 Aug 07
• High snubberless turn-off rating
• Wide temperature range
• High electromagnetic immunity
• Simple control interface with status feedback
• AC or DC supply voltage
• Option for series connection (contact factory)
Blocking
Maximum rated values
1)
Parameter Symbol
Conditions min typ max Unit
Rep. peak off-state voltage
V
DRM
Gate Unit energized 6500 V
Permanent DC voltage for
100 FIT failure rate of GCT
V
DC-link
Ambient cosmic radiation at sea level
in open air. Gate Unit energized
4000 V
Reverse voltage V
RRM
17 V
Characteristic values
Parameter Symbol
Conditions min typ max Unit
Rep. peak off-state current I
DRM
V
D
= V
DRM
, Gate Unit energized 50 mA
Mechanical data (see Fig. 11, 12)
Maximum rated values
1)
Parameter Symbol
Conditions min typ max Unit
Mounting force F
m
36 40 44 kN
Characteristic values
Parameter Symbol
Conditions min typ max Unit
Pole-piece diameter D
p
± 0.1 mm 85 mm
Housing thickness H
25.3 25.8 mm
Weight m
2.9 kg
Surface creepage distance D
s
Anode to Gate 33 mm
Air strike distance D
a
Anode to Gate 10 mm
Length l
± 1.0 mm 439 mm
Height h
± 1.0 mm 40 mm
Width IGCT w
± 1.0 mm 173 mm
1) Maximum rated values indicate limits beyond which damage to the device may occur