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5SHY42L6500

5SHY42L6500首页预览图
型号: 5SHY42L6500
PDF文件:
  • 5SHY42L6500 PDF文件
  • 5SHY42L6500 PDF在线浏览
功能描述: Asymmetric Integrated Gate- Commutated Thyristor
PDF文件大小: 766.13 Kbytes
PDF页数: 共9页
制造商: ABB[The ABB Group]
制造商LOGO: ABB[The ABB Group] LOGO
制造商网址: http://www.abb.com
捡单宝5SHY42L6500
PDF页面索引
120%
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
V
DRM
=
6500
V
I
TGQM
=
4200
A
I
TSM
=
26×10
3
A
V
(T0)
=
2.0
V
r
T
=
0.54
m
V
DC-link
=
4000
V
Asymmetric Integrated Gate-
Commutated Thyristor
5SHY 42L6500
PRELIMINARY
Doc. No. 5SYA1245-00 Aug 07
High snubberless turn-off rating
Wide temperature range
High electromagnetic immunity
Simple control interface with status feedback
AC or DC supply voltage
Option for series connection (contact factory)
Blocking
Maximum rated values
1)
Parameter Symbol
Conditions min typ max Unit
Rep. peak off-state voltage
V
DRM
Gate Unit energized 6500 V
Permanent DC voltage for
100 FIT failure rate of GCT
V
DC-link
Ambient cosmic radiation at sea level
in open air. Gate Unit energized
4000 V
Reverse voltage V
RRM
17 V
Characteristic values
Parameter Symbol
Conditions min typ max Unit
Rep. peak off-state current I
DRM
V
D
= V
DRM
, Gate Unit energized 50 mA
Mechanical data (see Fig. 11, 12)
Maximum rated values
1)
Parameter Symbol
Conditions min typ max Unit
Mounting force F
m
36 40 44 kN
Characteristic values
Parameter Symbol
Conditions min typ max Unit
Pole-piece diameter D
p
± 0.1 mm 85 mm
Housing thickness H
25.3 25.8 mm
Weight m
2.9 kg
Surface creepage distance D
s
Anode to Gate 33 mm
Air strike distance D
a
Anode to Gate 10 mm
Length l
± 1.0 mm 439 mm
Height h
± 1.0 mm 40 mm
Width IGCT w
± 1.0 mm 173 mm
1) Maximum rated values indicate limits beyond which damage to the device may occur
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