ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
V
DRM
=
4500
V
I
TGQM
=
630
A
I
TSM
=
5×10
3
A
V
(T0)
=
1.8
V
r
T
=
2
mΩ
V
DC-link
=
2800
V
Reverse Conducting Integrated
Gate-Commutated Thyristor
5SHX 08F4510
PRELIMINARY
Doc. No. 5SYA1223-06 Aug 07
• High snubberless turn-off rating
• Optimized for medium frequency (<1 kHz) and
low turn-off losses
• High reliability
• High electromagnetic immunity
• Simple control interface with status feedback
• AC or DC supply voltage
• Suitable for series connection (contact factory)
Blocking
Maximum rated values
Note 1
Parameter Symbol
Conditions min typ max Unit
Repetitive peak off-state
voltage
V
DRM
Gate Unit energized 4500 V
Permanent DC voltage for
100 FIT failure rate of
RC-GCT
V
DC-link
Ambient cosmic radiation at sea level
in open air. Gate Unit energized
2800 V
Characteristic values
Parameter Symbol
Conditions min typ max Unit
Repetitive peak off-state
current
I
DRM
V
D
= V
DRM
, Gate Unit energized 20 mA
Mechanical data (see Fig. 20, 21)
Maximum rated values
Note 1
Parameter Symbol
Conditions min typ max Unit
Mounting force F
m
14 16 18 kN
Characteristic values
Parameter Symbol
Conditions min typ max Unit
Pole-piece diameter D
p
± 0.1 mm 47 mm
Housing thickness H
25.9 26.4 mm
Weight m
1.01 kg
Surface creepage distance D
s
Anode to Gate 33 mm
Air strike distance D
a
Anode to Gate 13 mm
Length l
± 1.0 mm 296 mm
Height h
± 1.0 mm 47 mm
Width IGCT w
± 1.0 mm 208 mm
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur
