ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
V
DRM
= 4500 V
I
TGQM
= 340 A
I
TSM
=2.1kA
V
T0
=1.8V
r
T
=4.7
mΩ
ΩΩ
Ω
V
DClink
= 2800 V
Reverse Conducting Integrated
Gate-Commutated Thyristor
5SHX 04D4502
Doc. No. 5SYA1224-03 Jan. 02
•
••
• Direct fiber optic control
•
••
• Fast response (t
don
< 3 µs, t
doff
< 6 µs)
•
••
• Precise timing (∆
∆∆
∆t
doff
< 800 ns)
•
••
• Patented free floating silicon technology
•
••
• Optimized low on-state and switching losses
•
••
• Very high EMI immunity
•
••
• Cosmic radiation withstand rating
Blocking
V
DRM
Repetitive peak off-state voltage 4500 V
V
GR
≥ 2V
I
DRM
Repetitive peak off-state current
≤
20 mA V
D
= V
DRM
V
GR
≥ 2V
V
DClink
Permanent DC voltage for 100
FIT failure rate
2800 V
0 ≤ T
j
≤ 115 °C. Ambient cosmic
radiation at sea level in open air.
Mechanical data (see Fig. 9)
min. 10 kN
F
m
Mounting force
max. 14 kN
D
p
Pole-piece diameter 34 mm ±0.1 mm
H Housing thickness 26 mm ±0.5 mm
m Weight IGCT 0.55 kg
D
s
Surface creepage distance
≥
33 mm
D
a
Air strike distance
≥
13 mm
l Length IGCT 202.5 mm +0/-0.5 mm
h Height IGCT 46.5 mm ±1.0 mm
w Width IGCT 200 mm +0/-0.5 mm
