ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
V
DRM
=
4500
V
I
TGQM
=
4000
A
I
TSM
=
25×10
3
A
V
T0
=
2.1
V
r
T
=
0.58
mΩ
V
Dclink
=
2800
V
Asymmetric Gate turn-off
Thyristor
5SGA 40L4501
Doc. No. 5SYA1208-02 March 05
• Patented free-floating silicon technology
• Low on-state and switching losses
• Annular gate electrode
• Industry standard housing
• Cosmic radiation withstand rating
Blocking
Maximum rated values
1)
Parameter Symbol Conditions min typ max Unit
Repetitive peak off-state
voltage
V
DRM
V
GR
≥ 2 V
4500 V
Repetitive peak reverse
voltage
V
RRM
17 V
Permanent DC voltage for
100 FIT failure rate
V
DC-link
Ambient cosmic radiation at sea level
in open air.
2800 V
Characteristic values
Parameter Symbol Conditions min typ max Unit
Repetitive peak off-state
current
I
DRM
V
D
= V
DRM
, V
GR
≥ 2 V
100 mA
Repetitive peak reverse
current
I
RRM
V
R
= V
RRM
, R
GK
= ∞ Ω
50 mA
Mechanical data
Maximum rated values
1)
Parameter Symbol
Conditions min typ max Unit
Mounting force F
m
36 40 44 kN
Characteristic values
Parameter Symbol
Conditions min typ max Unit
Pole-piece diameter D
p
± 0.1 mm 85 mm
Housing thickness H
25.6 26.1 mm
Weight m
1.5 kg
Surface creepage distance D
s
Anode to Gate 33 mm
Air strike distance D
a
Anode to Gate 14 mm
1) Maximum rated values indicate limits beyond which damage to the device may occur