ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
V
DRM
= 4500 V
I
TGQM
= 3000 A
I
TSM
= 24×10
3
A
V
T0
=2.2V
r
T
=0.6
mΩ
ΩΩ
Ω
V
Dclink
= 2800 V
Asymmetric Gate turn-off
Thyristor
5SGA 30J4502
Doc. No. 5SYA1202-03 Jan. 03
•
••
• Patented free-floating silicon technology
•
••
• Low on-state and switching losses
•
••
• Annular gate electrode
•
••
• Industry standard housing
•
••
• Cosmic radiation withstand rating
Blocking
Maximum rated values
1)
Parameter Symbol Conditions min typ max Unit
Repetitive peak off-state
voltage
V
DRM
V
GR
≥ 2 V
4500 V
Repetitive peak reverse
voltage
V
RRM
17 V
Permanent DC voltage for
100 FIT failure rate
V
Dclink
Ambient cosmic radiation at sea level
in open air.
2800 V
Characteristic values
Parameter Symbol Conditions min typ max Unit
Repetitive peak off-state
current
I
DRM
V
D
= V
DRM
, V
GR
≥ 2 V
60 mA
Repetitive peak reverse
current
I
RRM
V
R
= V
RRM
, R
GK
= ∞ Ω
20 mA
Mechanical data
Maximum rated values
1)
Parameter Symbol Conditions min typ max Unit
Mounting force F
m
36 40 44 kN
Characteristic values
Parameter Symbol Conditions min typ max Unit
Pole-piece diameter D
p
± 0.1 mm 75 mm
Housing thickness H ± 0.5 mm 26 mm
Weight m 1.3 kg
Surface creepage distance D
s
Anode to Gate 33 mm
Air strike distance D
a
Anode to Gate 15 mm
1) Maximum rated values indicate limits beyond which damage to the device may occur