ABB Semiconductors AG reserves the right to change specifications without notice.
V
DRM
= 2500
V
I
TGQM
= 2500
A
I
TSM
= 16
kA
V
T0
= 1.66
V
r
T
= 0.57
m
Ω
V
DClin
= 1400
V
Gate turn-off Thyristor
5SGA 25H2501
Doc. No. 5SYA1206-01 Dec. 04
• Patented free-floating silicon technology
• Low on-state and switching losses
• Annular gate electrode
• Industry standard housing
• Cosmic radiation withstand rating
Blocking
V
DRM
Repetitive peak off-state voltage 2500
V
V
GR
≥ 2V
V
RRM
Repetitive peak reverse voltage 17
V
I
DRM
Repetitive peak off-state current
≤
30
mA V
D
= V
DRM
V
GR
≥ 2V
I
RRM
Repetitive peak reverse current
≤
50
mA V
R
= V
RRM
R
GK
=
∞
V
DClink
Permanent DC voltage for 100
FIT failure rate
1400
V
-40 ≤ T
j
≤ 125 °C. Ambient cosmic
radiation at sea level in open air.
Mechanical data (see Fig. 19)
min.
17
kN
F
m
Mounting force
max.
24
kN
A
Acceleration:
Device unclamped
Device clamped
50
200
m/s
2
m/s
2
M Weight
0.8
kg
D
S
Surface creepage distance
≥
22
mm
D
a
Air strike distance
≥
13
mm
