ABB Semiconductors AG reserves the right to change specifications without notice.
V
DRM
= 2500
V
I
TGQM
= 2000
A
I
TSM
= 16
kA
V
T0
= 1.66
V
r
T
= 0.57
mW
V
DClin
= 1400
V
Gate turn-off Thyristor
5SGA 20H2501
Doc. No. 5SYA1205-01 Jun. 04
· Patented free-floating silicon technology
· Low on-state and switching losses
· Annular gate electrode
· Industry standard housing
· Cosmic radiation withstand rating
Blocking
V
DRM
Repetitive peak off-state voltage 2500
V
V
GR
³ 2V
V
RRM
Repetitive peak reverse voltage 17
V
I
DRM
Repetitive peak off-state current
£
30
mA V
D
= V
DRM
V
GR
³ 2V
I
RRM
Repetitive peak reverse current
£
50
mA V
R
= V
RRM
R
GK
= ¥
V
DClink
Permanent DC voltage for 100
FIT failure rate
1400
V
-40 £ T
j
£ 125 °C. Ambient cosmic
radiation at sea level in open air.
Mechanical data (see Fig. 19)
min.
17
kN
F
m
Mounting force
max.
24
kN
A
Acceleration:
Device unclamped
Device clamped
50
200
m/s
2
m/s
2
M Weight
0.8
kg
D
S
Surface creepage distance
³
22
mm
D
a
Air strike distance
³
13
mm