ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
V
RRM
=
6000
V
I
F(AV)M
=
1100
A
I
FSM
=
18×10
3
A
V
(T0)
=
1.5
V
r
T
=
0.6
mΩ
V
DC-link
=
3800
V
Fast Recovery Diode
5SDF 10H6004
Doc. No. 5SYA1109-02 Oct. 06
• Patented free-floating silicon technology
• Low on-state and switching losses
• Optimized for use as freewheeling diode in high-
voltage GTO converters
• Industry standard housing
• Cosmic radiation withstand rating
Blocking
Maximum rated values
1)
Parameter Symbol Conditions Value Unit
Repetitive peak reverse voltage V
RRM
f = 50 Hz, t
p
= 10ms, T
vj
= 125°C 6000 V
Permanent DC voltage for 100 FIT
failure rate
V
DC-link
Ambient cosmic radiation at sea level in open
air. (100% Duty)
3800 V
Characteristic values
Parameter Symbol Conditions min typ max Unit
Repetitive peak reverse current I
RRM
V
R
= V
RRM
, T
vj
= 125°C 50 mA
Mechanical data
Maximum rated values
1)
Parameter Symbol Conditions min typ max Unit
Mounting force F
m
36 40 44 kN
Acceleration a
Device unclamped 50 m/s
2
Acceleration a
Device clamped 200 m/s
2
Characteristic values
Parameter Symbol Conditions min typ max Unit
Weight m
0.83 kg
Housing thickness H
26.2 26.6 mm
Surface creepage distance D
S
30 mm
Air strike distance D
a
20 mm
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur
