ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
V
RRM
=
4500
V
I
F(AV)M
=
1440
A
I
FSM
=
25×10
3
A
V
(T0)
=
1.75
V
r
T
=
0.88
mΩ
V
DClink
=
2800
V
Fast Recovery Diode
5SDF 10H4520
Doc. No. 5SYA1170-00 March 05
• Low temperature bonding technology
• Industry standard housing
• Cosmic radiation withstand rating
• Low on-state and switching losses
• Optimized for snubberless operation
Blocking
Maximum rated values
1)
Parameter Symbol Conditions Value Unit
Repetitive peak reverse voltage V
RRM
f = 50 Hz, t
p
= 10ms, T
vj
= 140°C 4500 V
Permanent DC voltage for 100 FIT
failure rate
V
DClink
Ambient cosmic radiation at sea level in open
air. (100% Duty)
2800 V
Permanent DC voltage for 100 FIT
failure rate
V
DClink
Ambient cosmic radiation at sea level in open
air. (5% Duty)
3200 V
Characteristic values
Parameter Symbol Conditions min typ max Unit
Repetitive peak reverse current I
RRM
V
R
= V
RRM
, T
vj
= 140°C 100 mA
Mechanical data
Maximum rated values
1)
Parameter Symbol Conditions min typ max Unit
Mounting force F
m
36 40 46 kN
Acceleration a
Device unclamped 50 m/s
2
Acceleration a
Device clamped 200 m/s
2
Characteristic values
Parameter Symbol Conditions min typ max Unit
Weight m
0.83 kg
Housing thickness H
25.8 26.1 mm
Surface creepage distance D
S
33 mm
Air strike distance D
a
20 mm
1) Maximum rated values indicate limits beyond which damage to the device may occur