ABB Semiconductors AG reserves the right to change specifications without notice.
V
RRM
= 4500 V
I
FAVM
= 650 A
I
FSM
=16kA
V
F0
=1.4V
r
F
=1
mΩ
ΩΩ
Ω
V
DClink
= 2800 V
Doc. No. 5SYA1107-03 Sep. 01
• Patented free-floating silicon technology
• Low on-state and switching losses
• Optimized for use as freewheeling diode in GTO converters with high DC link
voltages
• Standard press-pack housing, hermetically cold-welded
• Cosmic radiation withstand rating
Blocking
V
RRM
Repetitive peak reverse voltage 4500 V Half sine wave, t
P
= 10 ms, f = 50 Hz
I
RRM
Repetitive peak reverse current
≤
50 mA V
R
= V
RRM,
T
j
= 125°C
V
DClink
Permanent DC voltage for 100 FIT
failure rate
2800 V
100% Duty
V
DClink
Permanent DC voltage for 100 FIT
failure rate
V
5% Duty
Ambient cosmic radiation at
sea level in open air.
Mechanical data (see Fig. 12)
min. 20 kN
F
m
Mounting force
max. 24 kN
a
Acceleration:
Device unclamped
Device clamped
50
200
m/s
2
m/s
2
m Weight
0.46
kg
D
S
Surface creepage distance
≥
33
mm
D
a
Air strike distance
≥
20
mm
Fast Recovery Diode
5SDF 07F4501