ABB Semiconductors AG reserves the right to change specifications without notice.
V
RRM
= 2500 V
I
FAVM
= 420 A
I
FSM
=8.5kA
V
F0
=1.7V
r
F
=0.62
mΩ
ΩΩ
Ω
V
DClink
= 1500 V
Doc. No. 5SYA1114-03 Sep. 01
• Patented free-floating silicon technology
• Low on-state and switching losses
• Optimized for use as freewheeling diode in GTO converters
• Standard press-pack housing, hermetically cold-welded
• Cosmic radiation withstand rating
Blocking
V
RRM
Repetitive peak reverse voltage 2500 V Half sine wave, t
P
= 10 ms, f = 50 Hz
I
RRM
Repetitive peak reverse current
≤
50 mA V
R
= V
RRM,
T
j
= 125°C
V
DClink
Permanent DC voltage for 100 FIT
failure rate
1500 V
100% Duty
V
DClink
Permanent DC voltage for 100 FIT
failure rate
V
5% Duty
Ambient cosmic radiation at
sea level in open air.
Mechanical data (see Fig. 12)
min. 10 kN
F
m
Mounting force
max. 12 kN
a
Acceleration:
Device unclamped
Device clamped
50
200
m/s
2
m/s
2
m Weight
0.25
kg
D
S
Surface creepage distance
≥
30
mm
D
a
Air strike distance
≥
20
mm
Fast Recovery Diode
5SDF 05D2505
