ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
V
RRM
= 2500 V
I
FAVM
= 490 A
I
FSM
=8.5×10
3
A
V
F0
=1.4V
r
F
=0.52
mΩ
ΩΩ
Ω
V
DClink
= 1100 V
Fast Recovery Diode
5SDF 05D2501
Doc. No. 5SYA1112-03 Jan. 03
•
••
• Patented free-floating silicon technology
•
••
• Low switching losses
•
••
• Optimized for use as snubber diode in GTO
converters
•
••
• Industry standard press-pack ceramic housing,
hermetically cold-welded
•
••
• Cosmic radiation withstand rating
Blocking
Maximum rated values
1)
Parameter Symbol Conditions Value Unit
Repetetive peak reverse voltage V
RRM
f = 50 Hz, t
p
= 10ms, T
j
= 125°C 2500 V
Permanent DC voltage for 100 FIT
failure rate
V
DClink
Ambient cosmic radiation at sea level in open
air. (100% Duty)
1100 V
Permanent DC voltage for 100 FIT
failure rate
V
DClink
Ambient cosmic radiation at sea level in open
air. (5% Duty)
1500 V
Characteristic values
Parameter Symbol Conditions min typ max Unit
Repetitive peak reverse current I
RRM
V
R
= V
RRM
, Tj = 125°C 50 mA
Mechanical data
Maximum rated values
1)
Parameter Symbol Conditions min typ max Unit
Mounting force F
M
10 11 12 kN
Acceleration a Device unclamped 50 m/s
2
Acceleration a Device clamped 200 m/s
2
Characteristic values
Parameter Symbol Conditions min typ max Unit
Weight m 0.25 kg
Housing thickness H 26 mm
Pole-piece diameter D
P
34 mm
Surface creepage distance D
S
30 mm
Air strike distance D
a
20 mm
1) Maximum rated values indicate limits beyond which damage to the device may occur