ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
V
RSM
= 4000 V
I
F(AV)M
= 5200 A
I
F(RMS)
= 8200 A
I
FSM
= 85×10
3
A
V
F0
=0.8V
r
F
= 0.086
mΩ
ΩΩ
Ω
Rectifier Diode
5SDD 54N4000
Doc. No. 5SYA1171-00 Dec. 03
•
••
• Patented free-floating silicon technology
•
••
• Very low on-state losses
•
••
• Optimum pow er handling capability
Blocking
Maximum rated values
1)
Parameter Symbol Conditions Value Unit
Repetitive peak reverse voltage V
RRM
f = 50 Hz, t
p
= 10ms, T
j
= 0...150°C 3600 V
Non - repetitive peak reverse voltage V
RSM
f = 5 Hz, t
p
= 10ms, T
j
= 0...150°C 4000 V
Characteristic values
Parameter Symbol Conditions min typ max Unit
Max. (reverse) leakage current I
RRM
V
RRM
, Tj = 150°C 400 mA
Mechanical data
Maximum rated values
1)
Parameter Symbol Conditions min typ max Unit
Mounting force F
M
81 90 108 kN
Acceleration a Device unclamped 50 m/s
2
Acceleration a Device clamped 100 m/s
2
Characteristic values
Parameter Symbol Conditions min typ max Unit
Weight m 2.8 kg
Housing thickness H F
M
= 90 kN, T
a
= 25 °C 35.9 mm
Surface creepage distance D
S
56 mm
Air strike distance D
a
22 mm
1) Maximum rated values indicate limits beyond which damage to the device may occur