ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
V
RSM
=
2800
V
I
F(AV)M
=
5380
A
I
F(RMS)
=
8450
A
I
FSM
=
65×10
3
A
V
F0
=
0.77
V
r
F
=
0.082
mΩ
Rectifier Diode
5SDD 51L2800
Doc. No. 5SYA1103-01 Feb. 05
• Patented free-floating silicon technology
• Very low on-state losses
• High average and surge current.
Blocking
Maximum rated values
1)
Parameter Symbol Conditions Value Unit
Repetitive peak reverse voltage V
RRM
f = 50 Hz, t
p
= 10ms, T
j
= 175°C 2000 V
Non-repetitive peak reverse voltage V
RSM
f = 5 Hz, t
p
= 10ms, T
j
= 175°C 2800 V
Non-repetitive peak reverse voltage V
RSM
f = 50 Hz, t
p
≤ 5ms, T
j
= ...175°C
3000 V
Characteristic values
Parameter Symbol Conditions min typ max Unit
Max. (reverse) leakage current I
RRM
V
RRM
, Tj = 175°C 400 mA
T
vj
= -40°C reduces V
RSM
and V
RRM
by 5%.
Mechanical data
Maximum rated values
1)
Parameter Symbol Conditions min typ max Unit
Mounting force F
M
63 70 77 kN
Acceleration a
Device unclamped 50 m/s
2
Acceleration a
Device clamped 100 m/s
2
Characteristic values
Parameter Symbol Conditions min typ max Unit
Weight m
1.45 kg
Housing thickness H
F
M
= 70 kN, T
a
= 25 °C 25.7 26.3 mm
Surface creepage distance D
S
35 mm
Air strike distance D
a
14 mm
1) Maximum rated values indicate limits beyond which damage to the device may occur
