ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
V
RSM
=
5500
V
I
F(AV)M
=
3480
A
I
F(RMS)
=
5470
A
I
FSM
=
46×10
3
A
V
F0
=
0.94
V
r
F
=
0.147
mΩ
Rectifier Diode
5SDD 33L5500
Doc. No. 5SYA1168-00 March 05
• Patented free-floating silicon technology
• Very low on-state losses
• Optimum power handling capability
Blocking
Maximum rated values
1)
Parameter Symbol Conditions Value Unit
Repetitive peak reverse voltage V
RRM
f = 50 Hz, t
p
= 10ms, T
j
= 0...150°C 5000 V
Non-repetitive peak reverse voltage V
RSM
f = 5 Hz, t
p
= 10ms, T
j
= 0...150°C 5500 V
Characteristic values
Parameter Symbol Conditions min typ max Unit
Max. (reverse) leakage current I
RRM
V
RRM
, Tj = 150°C 400 mA
Mechanical data
Maximum rated values
1)
Parameter Symbol Conditions min typ max Unit
Mounting force F
M
63 70 77 kN
Acceleration a
Device unclamped 50 m/s
2
Acceleration a
Device clamped 100 m/s
2
Characteristic values
Parameter Symbol Conditions min typ max Unit
Weight m
1.45 kg
Housing thickness H
F
M
= 70 kN, T
a
= 25 °C 26.0 26.6 mm
Surface creepage distance D
S
35 mm
Air strike distance D
a
14 mm
1) Maximum rated values indicate limits beyond which damage to the device may occur
