ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
V
RSM
= 3000 V
I
FAVM
= 2596 A
I
FRMS
= 4078 A
I
FSM
= 30×10
3
A
V
F0
= 0.906 V
r
F
= 0.135
mΩ
ΩΩ
Ω
Rectifier Diode
5SDD 24F2800
Doc. No. 5SYA1167-00 Jan. 03
•
••
• Very low on-state losses
•
••
• Optimum power handling capability
Blocking
Maximum rated values
1)
Parameter Symbol Conditions Value Unit
Repetetive peak reverse voltage V
RRM
f = 50 Hz, t
p
= 10ms, T
j
= -40...160°C 2800 V
Non - repetetive peak reverse voltage V
RSM
f = 5 Hz, t
p
= 10ms, T
j
= -40...160°C 3000 V
Characteristic values
Parameter Symbol Conditions min typ max Unit
Max. (reverse) leakage current I
RRM
V
RRM
, Tj = 160°C 50 mA
Mechanical data
Maximum rated values
1)
Parameter Symbol Conditions min typ max Unit
Mounting force F
M
20 22 24 kN
Acceleration a Device unclamped 50 m/s
2
Acceleration a Device clamped 100 m/s
2
Characteristic values
Parameter Symbol Conditions min typ max Unit
Weight m 0.5 kg
Housing thickness H 26 mm
Pole-piece diameter D
P
47 mm
Surface creepage distance D
S
33 mm
Air strike distance D
a
18 mm
1) Maximum rated values indicate limits beyond which damage to the device may occur