ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
V
RRM
= 200
V
I
FAVM
= 11000
A
I
FRMS
= 17300
A
I
FSM
= 85000
A
V
F0
= 0.75
V
r
F
= 0.020
mΩ
Doc. No. 5SYA1157-01 July 06
• Optimized for high current rectifiers
• Very low on-state voltage
• Very low thermal resistance
Blocking
V
RRM
Repetitive peak reverse voltage 200
V Half sine wave, t
P
= 10 ms, f = 50 Hz
V
RSM
Maximum peak reverse voltage 300
V Half sine wave, t
P
= 10 ms
I
RRM
Repetitive peak reverse current
≤ 50
mA T
j
= 170 °C V
R
= V
RRM
Mechanical
F
M
Mounting force min.
35
kN
max.
40
kN
a
Acceleration:
Device unclamped
Device clamped
50
200
m/s
2
m/s
2
m Weight
0.22
kg
D
S
Surface creepage distance
4
mm
D
a
Air strike distance
4
mm
Fig. 1
Outline drawing.
All dimensions are in millimeters and represent
nominal values unless stated otherwise.
Rectifier Diode
5SDD 0120C0200
