ABB Semiconductors AG
Key Parameters
V
RRM
= 2000 V
I
FAVM
= 2700 A
I
FSM
= 31.0 kA
V
F0
= 0.79 V
r
F
= 0.09
mΩΩ
Doc. No. 5SYA 1127 - 01 Apr-98
Avalanche Rectifier Diode
5SDA 27F2002
Features
• • Optimized for line frequency rectifiers
• • Low on-state voltage, narrow V
F
-bands for parallel operation
• • Self protected against transient overvoltages
• • Guaranteed maximum avalanche power dissipation
• • Industry standard housing
Blocking
Part number 5SDA 27F2002 5SDA 27F1702 5SDA 27F1402 Condition
V
RRM
2000 1700 1400 f = 50 Hz t
P
= 10 ms
V
RSM
2200 1870 1540 t
P
= 10 ms T
j
= 160°C
I
RRM
≤
50 mA V
RRM
T
j
= 160°C
P
RSM
≤
140 kW t
P
= 20 µs T
j
= 45°C
≤
100 kW t
P
= 20 µs T
j
= 160°C
Mechanical data
F
M
Mounting force min. 20 kN
max. 24 kN
a
Acceleration
Device unclamped
Device clamped
50
200
m/s
2
m/s
2
m Weight 0.5 kg
D
S
Surface creepage distance 30 mm
D
a
Air strike distance 20 mm