SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 – AUGUST 2003
FEATURES
* 150 Volt V
CEO
* 1 Amp continuous current
COMPLEMENTARY TYPE – FMMT455
PARTMARKING DETAIL – 555
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
-160 V
Collector-Emitter Voltage V
CEO
-150 V
Emitter-Base Voltage V
EBO
-5 V
Peak Pulse Current I
CM
-2 A
Continuous Collector Current I
C
-1 A
Base Current I
B
-200 mA
Power Dissipation at T
amb
= 25°C P
tot
500 mW
Operating and Storage Temperature Range T
j:
T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-160 V
I
C
=-100 A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-150 V I
C
=-10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5 V
I
E
=-100 A
Collector Cut-Off Current I
CBO
-0.1
-10
A
A
V
CB
=-140V
V
CB
=-140V, T
amb
=100°C
Emitter Cut-Off Current I
EBO
-0.1
A
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.3 V I
C
=-100mA, I
B
=-10mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1 V I
C
=-100mA, I
B
=-10mA*
Base-Emitter
Turn-on Voltage
V
BE(on)
-1 V I
C
=-100mA, V
CE
=-10V*
Static Forward Current
Transfer Ratio
h
FE
50
50 300
I
C
=-10mA, V
CE
=-10V*
I
C
=-300mA, V
CE
=-10V*
Transition Frequency f
T
100 MHz I
C
=-50mA, V
CE
=-10V
f=100MHz
Output Capacitance C
obo
10 pF V
CB
=-10V, f=1MHz
* Measured under pulsed conditions. Pulse width=300
s. Duty cycle 2%
Spice parameter data is available upon request for this device
FMMT555
C
B
E
SOT23
3 - 1313 - 132
FMMT555
TYPICA L CHA RACTERISTICS
V
CE(sat)
vI
C
I
C
-
Collector Current (Amps)
V
C
E
(
s
a
t
)
-
(
V
o
l
t
s
)
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
h
FE
vI
C
V
BE(sat)
vI
C
I
C
- Collector Current (Amps)
V
BE(on)
vI
C
h
F
E
-
N
o
r
m
a
l
i
s
e
d
G
a
i
n
(
%
)
V
B
E
(
s
a
t
)
-
(
V
o
l
t
s
)
V
B
E
-
(
V
o
l
t
s
)
Single Pulse Test at Tamb=25°C
20
40
60
80
100
0
-1
-0.2
-0.4
-0.6
-0.8
Switching Speeds
I
C
-
Collector Current (Amps)
S
w
i
t
c
h
i
n
g
t
i
m
e
-0.0001
-0.001
-0.01 -0.1
I
C
/I
B
=10
V
CE
=-10V
-0.0001
-0.001
1
-0.01 -0.1
3
2
1
4
5
-0.1
-1
0
I
B1
=I
B2
=I
C
/10
-0.01
ZTX 554/55-2
ts
tf
td
tr
ts
µs
tr
ns
300
200
100
400
500
0
tf
ns
600
400
200
800
1000
0
td
ns
100
50
0
-0.6
-0.0001
-0.001
-1
-0.01
-0.1
-0.8
-1.0
-1.2
-1.4
-0.6
-1
-0.0001
-0.001
-0.01 -0.1
I
C
/I
B
=10
-1.0
-1.2
-1.4
-0.8
0
V
CE
=-10V
I
C
-Collector Current (A)
1
0.1
Safe Operating Area
VCE - Collector Emitter Voltage (V)
10V 100V
1s
DC
100ms
10ms
100
s
1ms
1V
0.01
0.001
0.1V
10
1000V
