4N35, 4N36, 4N37
OPTOCOUPLERS
SOES021C – NOVEMBER 1981 – REVISED APRIL 1998
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
COMPATIBLE WITH STANDARD TTL INTEGRATED CIRCUITS
Gallium-Arsenide-Diode Infrared Source
Optically Coupled to a Silicon npn
Phototransistor
High Direct-Current Transfer Ratio
High-Voltage Electrical Isolation
1.5-kV, 2.5-kV, or 3.55-kV Rating
High-Speed Switching
t
r
= 7 µs, t
f
= 7 µs Typical
Typical Applications Include Remote
Terminal Isolation, SCR and Triac Triggers,
Mechanical Relays and Pulse Transformers
Safety Regulatory Approval
UL/CUL, File No. E65085
absolute maximum ratings at 25°C free-air temperature (unless otherwise noted)
†
Input-to-output peak voltage (8-ms half sine wave): 4N35 3.55 kV. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4N36 2.5 kV. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4N37 1.5 kV. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input-to-output root-mean-square voltage (8-ms half sine wave): 4N35 2.5 kV. . . . . . . . . . . . . . . . . . . . . . . . .
4N36 1.75 kV. . . . . . . . . . . . . . . . . . . . . . . .
4N37 1.05 kV. . . . . . . . . . . . . . . . . . . . . . . .
Collector-base voltage 70 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector-emitter voltage (see Note 1) 30 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter-base voltage 7 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input-diode reverse voltage 6 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input-diode forward current: Continuous 60 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (1 µs, 300 pps) 3 A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Phototransistor continuous collector current 100 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous total power dissipation at (or below) 25°C free-air temperature:
Infrared-emitting diode (see Note 2) 100 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Phototransistor (see Note 3) 300 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous power dissipation at (or below) 25°C lead temperature:
Infrared-emitting diode (see Note 4) 100 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Phototransistor (see Note 5) 500 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating temperature range, T
A
–55°C to 100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
stg
–55°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only , and
functional operation of the device at these conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may
affect device reliability.
NOTES: 1. This value applies when the base-emitter diode is open-circulated.
2. Derate linearly to 100°C free-air temperature at the rate of 1.33 mW/°C.
3. Derate linearly to 100°C free-air temperature at the rate of 4 mW/°C.
4. Derate linearly to 100°C lead temperature at the rate of 1.33 mW/°C. Lead temperature is measured on the collector lead
0.8 mm (1/32 inch) from the case.
5. Derate linearly to 100°C lead temperature at the rate of 6.7 mW/°C.
Copyright 1998, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
1
2
3
6
5
4
ANODE
CATHODE
NC
BASE
COLLECTOR
EMITTER
DCJ
†
OR 6-TERMINAL DUAL-IN-LINE PACKAGE
(TOP VIEW)
†
4N35 only
NC – No internal connection
schematic
ANODE
CATHODE
NC
COLLECTOR
BASE
EMITTER
