• 当前位置:
  • 首页
  • >
  • PDF资料
  • >
  • 457QS16GE PDF文件及第1页内容在线浏览

457QS16GE

457QS16GE首页预览图
型号: 457QS16GE
PDF文件:
  • 457QS16GE PDF文件
  • 457QS16GE PDF在线浏览
功能描述: InGaP HBT 1 WATT POWER AMPLIFIER
PDF文件大小: 523.92 Kbytes
PDF页数: 共10页
制造商: AD[Analog Devices]
制造商LOGO: AD[Analog Devices] LOGO
制造商网址: http://www.analog.com
捡单宝457QS16GE
PDF页面索引
120%
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 240
LINEAR & POWER AMPLIFIERS - SMT
HMC457QS16G / 457QS16GE
InGaP HBT 1 WATT POWER
AMPLIFIER, 1.7 - 2.2 GHz
v03.0907
General Description
Features
Functional Diagram
The HMC457QS16G & HMC457QS16GE are high
dynamic range GaAs InGaP Heterojunction Bipolar
Transistor (HBT) 1 watt MMIC power ampli ers
operating between 1.7 and 2.2 GHz. Packaged in a
miniature 16 lead QSOP plastic package, the ampli er
gain is typically 27 dB from 1.7 to 2.0 GHz and 25 dB
from 2.0 to 2.2 GHz. Utilizing a minimum number of
external components, the ampli er output IP3 can
be optimized to +45 dBm. The power control (Vpd)
can be used for full power down or RF output power/
current control. The high output IP3 and PAE make
the HMC457QS16G & HMC457QS16GE ideal power
ampli ers for Cellular/3G base station & repeater
applications.
Output IP3: +46 dBm
Gain: 27 dB @ 1900 MHz
48% PAE @ +32 dBm Pout
+25 dBm W-CDMA Channel Power
@ -50 dBc ACPR
Integrated Power Control (Vpd)
QSOP16G SMT Package: 29.4 mm
2
Included in the HMC-DK002 Designers Kit
Electrical Speci cations, T
A
= +25°C, Vs= +5V, Vpd = +5V, Vbias = +5V
[1]
Typical Applications
The HMC457QS16G / HMC457QS16GE is ideal for
applications requiring a high dynamic range ampli er:
• CDMA & W-CDMA
• GSM, GPRS & Edge
• Base Stations & Repeaters
Parameter Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 1710 - 1990 2010 - 2170 MHz
Gain 24 27 22 25 dB
Gain Variation Over Temperature 0.025 0.035 0.025 0.035 dB / °C
Input Return Loss 11 11 dB
Output Return Loss 8 5 dB
Output Power for 1dB Compression (P1dB) 26 29 27.5 30.5 dBm
Saturated Output Power (Psat) 32.5 32 dBm
Output Third Order Intercept (IP3)
[2]
42 45 42 45 dBm
Noise Figure 6 5 dB
Supply Current (Icq) 500 500 mA
Control Current (Ipd) 4 4 mA
Bias Current (Vbias) 10 10 mA
[1] Speci cations and data re ect HMC457QS16G measured using the respective application circuits for each designated frequency band found
herein. Contact the HMC Applications Group for assistance in optimizing performance for your application.
[2] Two-tone output power of +15 dBm per tone, 1 MHz spacing.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
购买、咨询产品请填写询价信息:(3分钟左右您将得到回复)
询价型号*数量*批号封装品牌其它要求
删除
删除
删除
删除
删除
增加行数
  •  公司名:
  • *联系人:
  • *邮箱:
  • *电话:
  •  QQ:
  •  微信:

  • 关注官方微信

  • 联系我们
  • 电话:13714778017
  • 周一至周六:9:00-:18:00
  • 在线客服:

天天IC网由深圳市四方好讯科技有限公司独家运营

天天IC网 ( www.ttic.cc ) 版权所有©2014-2023 粤ICP备15059004号

因腾讯功能限制,可能无法唤起QQ临时会话,(点此复制QQ,添加好友),建议您使用TT在线询价。

继续唤起QQ 打开TT询价