September 2008 Rev 2 1/9
9
2STW4466
High power NPN epitaxial planar bipolar transistor
Features
■ High breakdown voltage V
CEO
= 80 V
■ Complementary to 2STW1693
■ Typical f
t
= 20 MHz
■ Fully characterized at 125
o
C
Applications
■ Audio power amplifier
Description
The device is a NPN transistor manufactured in
low voltage planar technology using base island
layout. The resulting transistor shows good gain
linearity coupled with low V
CE(sat)
behaviour.
Recommended for 40 W to 70 W high fidelity
audio frequency amplifier output stage.
Table 1. Device summary
Figure 1. Internal schematic diagram
TO-247
1
2
3
Order code
Marking Package Packaging
2STW4466 2STW4466 TO-247 Tube
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