February 2007 Rev 3 1/9
9
2STW1695
High power PNP epitaxial planar bipolar transistor
General features
■ High breakdown voltage V
CEO
= -140V
■ Complementary to 2STW4468
■ Typical f
t
=20MHz
■ Fully characterized at 125
o
C
■ In compliance with the 2002/93/EC European
Directive
Applications
■ Audio power amplifier
Description
The device is a PNP transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
Recommended for 70W to 100W high fidelity
audio frequency amplifier output stage.
Order codes
Internal schematic diagram
TO-247
1
2
3
Part Number Marking Package Packing
2STW1695 2STW1695 TO-247 Tube
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