October 2008 Rev 4 1/9
9
2STW1695
High power PNP epitaxial planar bipolar transistor
Features
■ High breakdown voltage V
CEO
= -140 V
■ Complementary to 2STW4468
■ Typical f
t
= 20 MHz
■ Fully characterized at 125
o
C
Applications
■ Audio power amplifier
Description
The device is a PNP transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
Recommended for 70 W to 100 W high fidelity
audio frequency amplifier output stage.
Figure 1. Internal schematic diagram
Table 1. Device summary
TO-247
1
2
3
Order code Marking Package Packaging
2STW1695 2STW1695 TO-247 Tube
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